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| New Product SUM45N25-58 Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) () 0.058 at VGS = 10 V 0.062 at VGS = 6 V ID (A) 45 43 FEATURES * TrenchFET(R) Power MOSFETS * 175 C Junction Temperature * New Low Thermal Resistance Package RoHS COMPLIANT APPLICATIONS * Primary Side Switch * Plasma Display Panel Sustainer Function D TO-263 G G DS Top View Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Typical Avalanche Voltaged Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy a Symbol VDS VDS (Avalanche)Typ VGS TC = 25 C TC = 125 C ID IDM IAR L = 0.1 mH TC = 25 C TA = 25 Cc EAR PD TJ, Tstg Limit 250 300 30 45 25 90 35 61 375b 3.75 - 55 to 175 Unit V A mJ W C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Guaranteed by design Document Number: 72314 S-70311-Rev. C, 12-Feb-07 www.vishay.com 1 Symbol RthJA RthJC Limit 40 0.4 Unit C/W New Product SUM45N25-58 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 30 V VDS = 250 V, VGS = 0 V VDS = 250 V, VGS = 0 V, TJ = 125 C VDS = 250 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125 C VGS = 10 V, ID = 20 A, TJ = 175 C VGS = 6 V, ID = 15 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c a Symbol Test Conditions Min 250 2 Typ Max Unit 4 250 1 50 250 V nA A A 70 0.047 0.058 0.121 0.163 0.049 70 5000 0.062 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr VDS = 15 V, ID = 20 A S VGS = 0 V, VDS = 25 V, f = 1 MHz 300 170 95 140 pF VDS = 125 V, VGS = 10 V, ID = 45 A f = 1 MHz VDD = 100 V, RL = 2.78 ID 45 A, VGEN = 10 V, Rg = 2.5 28 34 1.6 22 220 40 145 35 330 60 220 45 70 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25 C)b A V ns A C IF = 45 A, VGS = 0 V IF = 45 A, di/dt = 100 A/s 1.0 150 12 0.9 1.5 225 18 2 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product SUM45N25-58 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) I D - Drain Current (A) 6V 80 100 60 60 40 40 TC = 125 C 20 25 C 20 5V 4V 0 0 2 4 6 8 10 - 55 C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 150 TC = - 55 C 25 C 90 125 C 60 r DS(on) - On-Resistance () 120 g fs - Transconductance (S) 0.08 0.10 Transfer Characteristics 0.06 VGS = 6 V VGS = 10 V 0.04 30 0.02 0 0 10 20 30 40 50 60 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 40 80 120 160 200 Crss 20 On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) 16 VDS = 125 V ID = 45 A 12 8 4 Coss 0 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 72314 S-70311-Rev. C, 12-Feb-07 Gate Charge www.vishay.com 3 New Product SUM45N25-58 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.8 VGS = 10 V ID = 20 A I S - Source Current (A) 100 2.4 r DS(on) - On-Resistance (Normalized) 2.0 TJ = 150 C 10 TJ = 25 C 1.6 1.2 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 300 290 ID = 1.0 mA 280 270 260 250 240 IAV (A) at TA = 150 C 10 I Dav (a) IAV (A) at TA = 25 C 1 0.1 0.00001 0.0001 0.001 0.01 0.1 1 V (BR)DSS (V) 230 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product SUM45N25-58 Vishay Siliconix THERMAL RATINGS 50 100 10 s Limited by rDS(on) I D - Drain Current (A) 10 40 I D - Drain Current (A) 100 s 30 1 ms 10 ms 1 TC = 25 C Single Pulse 100 ms dc 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (C) VDS - Drain-to-Source Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area, Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72314. Document Number: 72314 S-70311-Rev. C, 12-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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